Sealed air gap for semiconductor chip

ABSTRACT

A semiconductor chip including a substrate; a dielectric layer over the substrate; a gate within the dielectric layer, the gate including a sidewall; a contact contacting a portion of the gate and a portion of the sidewall; and a sealed air gap between the sidewall, the dielectric layer and the contact.

BACKGROUND OF THE INVENTION

The present invention relates generally to forming a sealed air gap insemiconductor chips. In particular, the present invention provides asemiconductor chip and method for forming sealed air gaps insemiconductor chips by removing sacrificial spacers adjacent to gatesafter contact formation.

Semiconductor chips continue to be used in an increasing variety ofelectronic devices. Simultaneously, the trend in semiconductor chips isto create greater functional capacity with smaller devices. As a result,forming more efficient semiconductor chips requires that the componentsof semiconductor chips operate more efficiently.

Spacers including silicon nitride formed adjacent to gate sidewalls havea relatively high dielectric constant resulting in gate-to-diffusion andgate-to-contact parasitic capacitances that increase power consumptionand reduce performance of semiconductor chips. Spacers including oxidehave lower parasitic capacitance but do not stand up well tomiddle-of-line (MOL) processing. Replacing nitride spacers with oxideresults in a lower parasitic capacitance.

Air gaps formed adjacent to gate sidewalls provide the lowest possibledielectric constant with the lowest parasitic capacitance.

BRIEF SUMMARY OF EMBODIMENTS OF THE INVENTION

A first aspect of the invention includes a semiconductor chip,comprising: a substrate; a dielectric layer over the substrate; a gatewithin the dielectric layer, the gate including a sidewall; a contactcontacting a portion of the gate and a portion of the sidewall; and asealed air gap between the sidewall, the dielectric layer and thecontact.

A second aspect of the invention includes a method, comprising: forminga gate over a substrate; forming a sacrificial spacer adjacent to thegate; forming a first dielectric layer about the gate and thesacrificial spacer; forming a contact to the gate; substantiallyremoving the sacrificial spacer, wherein a space is formed between thegate and the first dielectric layer; and forming a sealed air gap in thespace by depositing a second dielectric layer over the first dielectriclayer.

A third aspect of the invention includes a method, comprising: forming agate; forming a sacrificial spacer adjacent to a sidewall of the gate;forming a first dielectric layer about the gate and the sacrificialspacer; forming a contact that contacts the gate and a portion of thesidewall of the gate; substantially removing the sacrificial spacer toform a sealed air gap between the gate, the contact and the firstdielectric layer; and forming a sealed air gap in the space bydepositing a second dielectric layer over the first dielectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of this invention will be more readilyunderstood from the following detailed description of the variousaspects of the invention taken in conjunction with the accompanyingdrawings that depict various embodiments of the invention, in which:

FIG. 1 shows a cross-section view of one embodiment of a step inprocessing of a semiconductor chip in accordance with this invention.

FIG. 2 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 3 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 4 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 5 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 6 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 7 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 8 shows a cross-section view of one alternative embodiment of astep in processing of a semiconductor chip in accordance with thisinvention.

FIG. 9 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 10 shows a cross-section view of one alternative embodiment of astep in processing of a semiconductor chip in accordance with thisinvention.

FIG. 11 shows a cross-section view of one alternative embodiment of astep in processing of a semiconductor chip in accordance with thisinvention.

FIG. 12 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 13 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

FIG. 14 shows a cross-section view of one embodiment of a next step inprocessing of semiconductor chip in accordance with this invention.

It is noted that the drawings of the invention are not to scale. Thedrawings are intended to depict only typical aspects of the invention,and therefore should not be considered as limiting the scope of theinvention. In the drawings, like numbering represents like elementsbetween the drawings.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

Referring to FIG. 1, a cross-section view of one embodiment of a step inprocessing of a semiconductor chip 102 in accordance with this inventionis shown. Semiconductor chip 102 includes a substrate 104. A gate 106may be formed over substrate 104 and may include a gate dielectric 108over substrate 104 and a gate electrode 110 over gate dielectric 108.Gate dielectric 108 may be comprised of, for example, an oxide and/or ahafnium oxide. Gate 106 may include a sidewall of gate 112 and a topsurface of gate 114. Cap 116 may be formed over gate 106 and mayinclude, for example, a nitride and/or an oxide. A spacer 118 may beformed adjacent to gate 106 and cap 116. A source 120 and a drain 122may be formed in the substrate 104 and a channel 124 may run betweensource 120 and drain 122 in substrate 104. A person skilled in the artwill readily recognize that location of source 120 and drain 122 may bereversed. Each of source 120 and drain 122 include a doped diffusionregion 126 and a silicide region 128. A shallow trench isolation 130 maybe formed in the substrate 104 to isolate adjacent source 120 of onegate 106 and drain 122 of another gate 106. As understood otherstructures have been omitted for clarity. The omitted structures mayinclude any conventional interconnect components, passive devices, etc.,and additional transistors as employed to make SRAMs, etc.

Substrate 104 may be comprised of but not limited to silicon, germanium,silicon germanium, silicon carbide, and those consisting essentially ofone or more Group III-V compound semiconductors having a compositiondefined by the formula Al_(X1)Ga_(X2)In_(X3)As_(Y1)P_(Y2)N_(Y3)Sb_(Y4),where X1, X2, X3, Y1, Y2, Y3, and Y4 represent relative proportions,each greater than or equal to zero and X1+X2+X3+Y1+Y2+Y3+Y4=1 (1 beingthe total relative mole quantity). Substrate 104 may also be comprisedof Group II-VI compound semiconductors having a compositionZn_(A1)Cd_(A2)Se_(B1)Te_(B2), where A1, A2, B1, and B2 are relativeproportions each greater than or equal to zero and A1+A2+B1+B2=1 (1being a total mole quantity). The processes to provide substrate 104, asillustrated and described, are well known in the art and thus, nofurther description is necessary.

Referring to FIG. 2, a cross-section view of one embodiment of a nextstep in processing of semiconductor chip 102 in accordance with thisinvention is shown. FIG. 2 shows forming a sacrificial spacer 232adjacent to sidewall of gate 112 and sacrificial spacer 232 may beformed by removing spacer 118 (FIG. 1) and re-forming sacrificial spacer232, e.g., by depositing a silicon nitride and performing a reactive ionetch (RIE). All or portion of spacer 118 may be used in re-formingsacrificial spacer 232. FIG. 2 also shows forming a first dielectriclayer 234 over the substrate 104 about gate 106 and sacrificial spacer232. As observed by comparing FIGS. 1 and 2, sacrificial spacer 232 maybe narrower than spacer 118 (FIG. 1) and may allow first dielectriclayer 234 to protect silicide region 128 during subsequent sacrificialspacer 232 removal (see FIGS. 6 and 8). Sacrificial spacer 232 mayseparate sidewall of gate 112 from first dielectric layer 234.Planarization of first dielectric layer 234 by any known or to bedeveloped method may expose cap 116 and sacrificial spacer 232.

First dielectric layer 234 may include silicon oxide (SiO₂), siliconnitride (SiN), or any other suitable material. Any number of dielectriclayers may be located over the chip body, as may other layers includedin semiconductor chips now known or later developed. In one embodiment,first dielectric layer may include silicon oxide (SiO₂) for itsinsulating, mechanical and optical qualities. First dielectric layer 234may include but is not limited to: silicon nitride (Si₃N₄), fluorinatedSiO₂ (FSG), hydrogenated silicon oxycarbide (SiCOH), porous SiCOH,boro-phosho-silicate glass (BPSG), silsesquioxanes, carbon (C) dopedoxides (i.e., organosilicates) that include atoms of silicon (Si),carbon (C), oxygen (O), and/or hydrogen (H), thermosetting polyaryleneethers, SiLK (a polyarylene ether available from Dow ChemicalCorporation), a spin-on silicon-carbon containing polymer materialavailable form JSR Corporation, other low dielectric constant (<3.9)material, or layers thereof. First dielectric layer 234 may be depositedusing conventional techniques described herein and/or those known in theart.

As used herein, the term “forming” may include any now known or laterdeveloped techniques appropriate for the material to be depositedincluding but are not limited to, for example: chemical vapor deposition(CVD), low-pressure CVD (LPCVD), plasma-enhanced CVD (PECVD),semi-atmosphere CVD (SACVD) and high density plasma CVD (HDPCVD), rapidthermal CVD (RTCVD), ultra-high vacuum CVD (UHVCVD), limited reactionprocessing CVD (LRPCVD), metalorganic CVD (MOCVD), sputteringdeposition, ion beam deposition, electron beam deposition, laserassisted deposition, thermal oxidation, thermal nitridation, spin-onmethods, physical vapor deposition (PVD), atomic layer deposition (ALD),chemical oxidation, molecular beam epitaxy (MBE), plating, evaporation.

Referring to FIGS. 3-5, a cross sectional view of one embodiment offorming a contact to gate 106 is illustrated. In FIG. 3, a mask 336 maybe formed over first dielectric layer 234. Forming mask 336 may includephotoresist technique or any other known or to be developed techniques.A first etching through cap 116 may form a first contact channel 338 togate 106. First etching may also include etching through a portion ofsacrificial spacer 232. A portion of cap 116 may remain. First contactchannel 338 may expose a portion of top surface of gate 314. Firstetching may include a chemical selective to photoresist.

In FIG. 4, a second etching through first dielectric layer 234 may forma second contact channel 440 to source 120 or drain 122. Second etchingmay be selective to cap 116 and sacrificial spacer 232.

In FIG. 5, mask 336 (FIG. 3) may be removed using any known or to bedeveloped technique. A first contact 542 may be formed in first contactchannel 338 (FIG. 3). A second contact 544 may be formed in secondcontact channel 440 (FIG. 4). First contact 542 and second contact 544may include at least one of copper and tungsten. First contact 542 maycontact a portion of top surface of gate 114 and sidewall of gate 112.

Referring to FIG. 6, substantially removing sacrificial spacer 232 (FIG.4) and cap 116 (FIG. 4) and exposing an air gap 646 between sidewall ofgate 112 and first dielectric layer 234 is illustrated. Air gap 646 oversubstrate 104 may be formed between sidewall of gate 112 and firstdielectric layer 234 and first contact 542.

Referring again to FIG. 5, substantially removing sacrificial spacer 232and cap 116 may include using a hot phosphorous wet etch. Hotphosphorous wet etch may be used when gate dielectric 108 includes anoxide, cap 116 includes a nitride, sacrificial spacer 232 includesnitride and first dielectric layer 234 includes silicon oxide or low kfilm containing Si, C, O, and H (also known as carbon-doped oxide(CDO)). Alternatively, hot phosphorous wet etch may be used when gatedielectric 108 includes hafnium oxide, cap 116 includes nitride,sacrificial spacer 232 includes hydrogen nitride (SiN_(x)H_(y) siliconnitride having a high Si—N—H bond content) and first dielectric layer234 includes CDO. Alternatively, substantially removing sacrificialspacer 232 and cap 116 may include using a buffered hydrofluoric acidwet etch. Buffered hydrofluoric acid wet etch may be used when gatedielectric 108 includes hafnium oxide, cap 116 includes oxide,sacrificial spacer 232 includes oxide and first dielectric layer 234includes CDO. Alternatively, buffered hydrofluoric acid wet etch may beused when gate dielectric 108 includes hafnium oxide, cap 116 includesnitride, sacrificial spacer 232 includes oxide and first dielectriclayer 234 includes CDO.

Referring to FIG. 7, forming sealed air gap 648 in the space bydepositing a second dielectric layer 750 over first dielectric layer 234is illustrated. Second dielectric layer 750 may partially fill air gap646 (FIG. 6) and may create sealed air gap 648 adjacent to sidewall ofgate 112.

Referring to FIG. 8, a cross sectional view of one alternativeembodiment of a step in forming a semiconductor chip 202 in accordancewith this invention is shown. As applied to FIG. 6, sacrificial spacer232 (FIG. 5) may be removed and cap 116 may remain intact exposing airgap 646 between sidewall of gate 112 and first dielectric layer 234.This process may include using buffered hydrofluoric acid wet etch.Buffered hydrofluoric acid wet etch may be used when gate dielectric 108includes hafnium oxide, cap 116 includes nitride, sacrificial spacer 232includes hydrogen nitride and first dielectric layer 234 includes CDO.

Referring to FIG. 9, a cross-section view of the alternative embodimentof FIG. 8 removing sacrificial spacer 232 with cap 116 remaining intactis illustrated. Second dielectric layer 750 may partially fill air gap646 (FIG. 8) and may create sealed air gap 648 adjacent to sidewall ofgate 112.

Referring to FIG. 10, a cross sectional view of one alternativeembodiment of a step in forming a semiconductor chip 302 in accordancewith this invention is shown. As applied to FIGS. 2-6, a dielectricoxygen diffusion barrier 1052 may be formed substantially over gatedielectric 108 prior to forming sacrificial spacer 232 (FIG. 2).Dielectric oxygen diffusion barrier 1052 may substantially preventoxygen from diffusing into gate dielectric 108 during removal ofsacrificial spacer 1032 when using buffered hydrogen fluoride wet etch.Dielectric oxygen diffusion barrier 1052 may remain in sealed air gap648 after forming second dielectric layer 750.

Turning to FIGS. 11-14 in one alternative embodiment as applied to FIG.2. FIG. 11 shows, prior to forming sacrificial spacer 232 (FIG. 2), aprotective spacer 1154 may be formed adjacent to gate 106 andsubstantially over gate dielectric 108.

FIG. 12 shows a portion of protective spacer 1154 removed, leaving aportion of protective spacer 1154 substantially over gate dielectric108. Protective spacer 1154 may substantially prevent oxygen fromdiffusing into gate dielectric 108 during removal of sacrificial spacer232 (FIG. 5) when using buffered hydrogen fluoride wet etch.

FIG. 13 shows a sacrificial spacer 232 may be formed over protectivespacer 1154 and adjacent to sidewall of gate 112. As shown in FIG. 14protective spacer 1154 may remain in sealed air gap 648 after formingsecond dielectric layer 750.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

This written description uses examples to disclose the invention,including the best mode, and also to enable any person skilled in theart to practice the invention, including making and using any devices orsystems and performing any incorporated methods. The patentable scope ofthe invention is defined by the claims, and may include other examplesthat occur to those skilled in the art. Such other examples are intendedto be within the scope of the claims if they have structural elementsthat do not differ from the literal language of the claims, or if theyinclude equivalent structural elements with insubstantial differencesfrom the literal languages of the claims.

1. A semiconductor chip, comprising: a substrate; a dielectric layerover the substrate; a gate within the dielectric layer, the gateincluding a sidewall; a contact contacting a portion of the gate and aportion of the sidewall; and a sealed air gap between the sidewall, thedielectric layer and the contact.
 2. The chip of claim 1, furthercomprising a dielectric oxygen diffusion barrier within the sealed airgap and substantially over the gate and a source and a drain in thesubstrate adjacent to the gate.
 3. The chip of claim 1, furthercomprising a protective spacer over a gate dielectric of the gate. 4.The chip of claim 1, wherein the contact comprises at least one ofcopper and tungsten.
 5. The chip of claim 1, further comprising ashallow trench isolation adjacent to the gate in the substrate.
 6. Amethod, comprising: forming a gate over a substrate; forming asacrificial spacer adjacent to the gate; forming a first dielectriclayer about the gate and the sacrificial spacer; forming a contact tothe gate; substantially removing the sacrificial spacer, wherein a spaceis formed between the gate and the first dielectric layer; and forming asealed air gap in the space by depositing a second dielectric layer overthe first dielectric layer.
 7. The method of claim 6, wherein the gateincludes a gate dielectric; and further comprising: forming a dielectricoxygen diffusion barrier substantially over the gate dielectric and asource and a drain in the substrate and prior to the sacrificial spacerforming.
 8. The method of claim 6, wherein the gate includes a gatedielectric; and further comprising prior to the sacrificial spacerforming: forming a protective spacer adjacent to the gate and over thegate dielectric; removing a portion of the protective spacer; andwherein the sacrificial spacer is positioned adjacent to the gate andover the protective spacer.
 9. The method of claim 6, wherein thecontact forming includes positioning the contact to a portion of a topsurface of the gate and a sidewall of the gate.
 10. The method of claim9, wherein the contact comprises at least one of copper and tungsten.11. The method of claim 6, further comprising: forming a cap over thegate, the gate including a gate dielectric, wherein the gate dielectricincludes an oxide, the cap includes a nitride, the sacrificial spacerincludes a nitride and the dielectric layer includes a carbon-dopedoxide, and wherein the substantially removing the sacrificial spacerincludes using a hot phosphorous wet etch.
 12. The method of claim 6,further comprising: forming a cap over the gate, the gate including agate dielectric, wherein the gate dielectric includes a hafnium oxide,the cap includes an oxide, the sacrificial spacer includes an oxide andthe dielectric layer includes a carbon-doped oxide, and wherein thesubstantially removing the sacrificial spacer includes using a bufferedhydrofluoric acid wet etch.
 13. The method of claim 6, furthercomprising: forming a cap over the gate, the gate including a gatedielectric, wherein the gate dielectric includes a hafnium oxide, thecap includes an oxide, the sacrificial spacer includes a hydrogennitride and the dielectric layer includes a carbon-doped oxide, andwherein the substantially removing the sacrificial spacer includes usinga buffered hydrofluoric acid wet etch.
 14. The method of claim 6,further comprising: forming a cap over the gate, the gate including agate dielectric, wherein the gate dielectric includes a hafnium oxide,the cap includes an nitride, the sacrificial spacer includes a hydrogennitride and the dielectric layer includes a carbon-doped oxide, andwherein the substantially removing the sacrificial spacer includes usinga buffered hydrofluoric acid wet etch.
 15. The method of claim 6,further comprising: forming a cap over the gate, the gate including agate dielectric, wherein the gate dielectric includes a hafnium oxide,the cap includes a nitride, the sacrificial spacer includes a hydrogennitride and the dielectric layer includes a carbon-doped oxide, andwherein the substantially removing the sacrificial spacer includes usinga hot phosphorous wet etch.
 16. A method, comprising: forming a gate;forming a sacrificial spacer adjacent to a sidewall of the gate; forminga first dielectric layer about the gate and the sacrificial spacer;forming a contact that contacts the gate and a portion of the sidewallof the gate; substantially removing the sacrificial spacer to form asealed air gap between the gate, the contact and the first dielectriclayer; and forming a sealed air gap in the space by depositing a seconddielectric layer over the first dielectric layer.
 17. The method ofclaim 16, wherein the gate includes a gate electrode and a gatedielectric.
 18. The method of claim 17, further comprising: forming adielectric oxygen diffusion barrier substantially over the gatedielectric prior to sacrificial spacer forming.
 19. The method of claim17, further comprising prior to the sacrificial spacer forming: forminga protective spacer adjacent to the gate and over the gate dielectric;removing a portion of the protective spacer; and wherein the sacrificialspacer is positioned adjacent to the gate and over the protectivespacer.
 20. The method of claim 16, wherein the contact comprises atleast one of copper and tungsten.